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If your file names start with the characters CN, the files are encoded in Chinese, so you can just do a find for CN-Files:
find CN-Files

If you have the full paths, you can make an index of the files:
ls -1 CN-Files > CN-files.txt

The index file would look like this:

You can use this to search the contents of the files.
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nc -v -l 1234 Q:

A OpenCL Kernel to decrease the image size using linear interpolation

Suppose I have an image of size 2 × 2. I want to crop it to a particular size using linear interpolation and not interpolate the whole image. The dimensions of the image is determined at run time and not known in advance.
For example, given that image size is 2 × 2, the cropped size is 5 × 5. Suppose the desired size is 5 × 5, the interpolation method I am using would go as follows:
Step 1: Interpolate the image from the source image into a target image of dimensions 2 × 2 (convert 2 × 2 image to a 5 × 5 image).
Step 2: Interpolate the source and target image pixels using bilinear interpolation.
Step 3: Determine the values of the intermediate pixels by using linear interpolation (i.e, linearly interpolate the pixels of source and target images).
Step 4: Determine the pixel values of the output image by using linear interpolation

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The problem is you are using private keys to sign your data so the “signing” process is mandatory.
After you make your dialog screen and you send it, you need to send back the information as a signed binary data with (not from) a signed binary key (as for any other binary data). Then when you receive the data, you need to verify it using the private key corresponding to the previous key you use to sign.

Digital Integrated Circuits (ICs), such as BiCMOS ICs, including BiCMOS/nMOS Complementary Metal-Oxide Semiconductor (CMOS) ICs, have transistor layers of very small geometry. The technology for manufacturing these small geometry MOSFETs has used polysilicon gate electrodes on a gate dielectric. Polysilicon gate electrodes are, however, very expensive and difficult to integrate on a semiconductor substrate.
Metal gates were therefore developed to replace the polysilicon gate. Metal gates are formed by patterning a refractory metal, such as tungsten, molybdenum or rhenium, into a desired configuration. As the size of metal gates shrinks, however, the ability to etch tungsten, molybdenum and rhenium into the fine lines and spaces required for sub-micron device geometry becomes problematic.
An alternative material to tungsten, molybdenum and rhenium for gates is the noble metal, such as platinum, platinum-rhodium, or the like. For example, a patterning of a refractory metal, such as titanium (Ti), platinum (Pt), platinum-rhodium (Pt-Rh), molybdenum (Mo) or tungsten (W), is used to form a composite sacrificial or etch-stop layer for subsequent patterning of a different sacrificial material, such as polysilicon, by reactive ion etching (RIE). The patterning of the sacrificial material takes place through the sacrificial metal layer.
After the patterning of the sacrificial material is completed, the sacrificial material is removed (e.g., by chemical or electrochemical means) from beneath the patterned sacrificial metal layer. However, due to the difference in material reactivity of the sacrificial metal and the sacrificial material, spiking or penetration of the sacrificial material may occur into the underlying sacrificial metal.

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